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| Datasheet File OCR Text: |
| NTE2553 Silicon NPN Transistor Darlington, Motor Driver, Switch Features: D High DC Current Gain D High Breakdown Voltage D Isolated TO220 Type Package Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Collector Power Dissipation, PC TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Collector Cut-Off Current Emitter Cut-Off Current Collector-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Emitter-Collector Forward Voltage Transition Frequency Collector Output Capacitance Turn-On Time Storage Time Fall Time Symbol ICBO IEBO Test Conditions VCB = 300V, IE = 0 VEB = 6V, IC = 0 Min - 50 300 200 500 100 - - - - - - - - Typ - - - - - - - - 1.5 40 200 - - - Max 100 150 - - 5000 - 2.0 2.3 2.0 - - 1.0 12 2.0 V V V MHz pF s s s Unit A mA V V V(BR)CBO IC = 1mA, IE = 0 hFE VCE(sat) VBE(sat) VECF fT Cob ton tstg tf VCE = 2V, IC = 5A VCE = 2V, IC = 10A IC = 10A, IB = 100mA IC = 10A, IB = 100mA IE = 10A, IB = 0 VCE = 2V, IC = 1A VCB = 10V, IE = 0, f = 1MHz VCC = 100V, IB1 = -IB2 = 100mA Collector-Emitter Sustaining Voltage VCEO(sus) IC = 250mA, L 40mH C B E .402 (10.2) Max .224 (5.7) Max .173 (4.4) Max .122 (3.1) Dia .114 (2.9) Max .295 (7.5) .669 (17.0) Max .165 (4.2) B C E .531 (13.5) Min .100 (2.54) .059 (1.5) Max NOTE: Tab is isolated |
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